2SA1179_0712 [BL Galaxy Electrical]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
| 型号： | 2SA1179_0712 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SA1179
FEATURES
Pb
Lead-free
z
High forward current transfer ratio hFE
which has satisfactory linearity.
High speed switching.
z
z
Complementary to 2SD1749.
APPLICATIONS
z
For power application and switching.
SOT-23
ORDERING INFORMATION
Type No.
2SA1179
Marking
Package Code
SOT-23
M
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
-55
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
-50
V
-5
V
Collector Current -Continuous
Collector Dissipation
-150
200
mA
mW
℃
PC
Junction and Storage Temperature
Tj,Tstg
-55~150
Document number: BL/SSSTC093
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SA1179
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=-10μA,IE=0
-55
V
V
V
V(BR)CEO
V(BR)EBO
IC=-1mA,IB=0
-50
-5
IE=-10μA,IC=0
ICBO
IEBO
VCB=-35V,IE=0
VEB=-4V,IC=0
-0.1
-0.1
μA
μA
Emitter cut-off current
DC current gain
hFE
VCE=-6V,IC=-1mA
200
400
-0.5
-1.0
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=-50mA, IB=-5mA
VCE(sat)
VBE(sat)
fT
V
IC=-50mA, IB=-5mA
VCE=-6V, IC=-10mA
V
180
4
MHz
Collector output capacitance
VCB=-6V,IE=0,f=1MHz
Cob
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC093
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SA1179
Document number: BL/SSSTC093
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SA1179
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
G
H
J
0.1Typical
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
2SA1179
3000/Tape&Reel
Document number: BL/SSSTC093
Rev.A
www.galaxycn.com
4
相关型号：
2SA1180
Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT100, 3 PIN
SANKEN
2SA1182
TRANSISTOR (AUDIO FREQUENCY LOW POWER AMPLIFIER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)
TOSHIBA
2SA1182-O
TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, TO-236MOD, SC-59, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明